Search for a full or partial Catalog Number, CAS Number or description
Your favorites Quick Order Form
Your cart is empty.
Contact Strem

'Product Blog'

A Volatile Manganese Precursor for ALD & CVD, 25-0230: Bis(N,N'-di-i-propylpentylamidinato)manganese(II)

Manganese Amidinate Offers High-Quality, Uniform Thin Mn Films

Thin films of transition metals and their oxides are crucial ingredients in advanced material applications such as magnetic information storage, microelectronics and catalysis.  ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) are techniques modified to deliver uniform thin films for these applications. Bis(N,N'-di-i-propylpentylamidinato)manganese(II),25-0230, is a new manganese precursor offered by Strem Chemicals for such applications.


25-0230 melts at 70 oC and has a highly selective reactivity with molecular hydrogen or water vapor affording fine films of metal or metal oxides.  The high thermal stability (>200oC) and volatility (vapor pressure at 90oC is 50 mTorr) make it a great candidate for ALD and CVD applications. This amidinate precursor is highly reactive, affording the deposition of manganese at reasonable rates in the growth of Mn(0) films. This reactive precursor is far superior to the carbonyl analogs currently available.

25-0230 + SiO2 surface (>300 oC) => MnSixOy

The formation of MnSixOy affords a smooth insulator (sheet resistance > 1017 W/sq) while serving as a barrier against Cu, O2, and H2O diffusion. The manganese metal penetrates only a few nanometers into the SiO2 resulting in conformal amorphous manganese silicate layers.  There is strong adhesion between Cu(Mn) and insulators, which increases the lifetime of circuits against failure by electromigration.

Alternatively, analogous MnNx films can be prepared by CVD of 25-0230 vapor with NH3.  MnNx prepared by CVD of manganese amidinate vapor with NH3 uniformly coats very narrow holes.  MnNx + Si form an insulating MnSiyOzNw layer, hindering diffusion of Cu, H2O, and O2.  As an interconnect structure for integrated circuits, manganese silicate and manganese silicon nitride layers completely surround copper wires. The barrier against copper diffusion protects the insulator from degradation and therefore premature breakdown during manufacturing and use. The manganese-containing coating also protects the copper from corrosion by oxygen or water found in its surroundings



  1. J. Electrochem. Soc., 2010, 157, D341. 
  2. J. Phys. Chem. C, 2012, 116, 23585.


Products mentioned in this blog and related products:

25-0230   Bis(N,N'-di-i-propylpentylamidinato)manganese(II), min. 98%  [1188406-04-3]

25-0200   Bis(cyclopentadienyl)manganese, 98+% (Manganocene)  [73138-26-8]

98-4060   Bis(cyclopentadienyl)manganese, 98+%, 25-0200, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD  [73138-26-8]

25-0210   Bis(ethylcyclopentadienyl)manganese, min. 98%  [101923-26-6]

98-4065   Bis(ethylcyclopentadienyl)manganese, min. 98%, 25-0210, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD  [101923-26-6]

25-0235   Bis(pentamethylcyclopentadienyl)manganese, min. 98% (Decamethylmanganocene)

25-0245   Bis(i-propylcyclopentadienyl)manganese, min. 98%[85594-02-1]

25-0390   Cyclopentadienylmanganese tricarbonyl, 98% Cymantrene [12079-65-1]

25-1330   Manganese carbonyl, 98% [10170-69-1]

25-1550   Methylcyclopentadienylmanganese tricarbonyl, min. 97% [12108-13-3]

25-5000   Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)manganese(III), 99% [Mn(TMHD)3]  66[14324-99-3]


For more information on other metal amidinates and precursors offered by Strem please see the links below:

Metal Amidinates for CVD/ALD Applications

Chemical Vapor Deposition/Atomic Layer Deposition (CVD/ALD) Precursors contained in Swagelok® Cylinders

List of Volatile Precursors for CVD

MOCVD, CVD & ALD Precursors Booklet


Return to Product Blog

Request the Strem Chemicals Catalog Bulk Quote Request Get Quarterly Updates by Email